ON THE CHANGE OF A CHARGE CARRIER LIFE SPAN UNDER IMPULSE PHOTO AGITATION
IN SILICON WITH DEEP EXTRINSIC CENTRES

Goryunov Vladimir Alexandrovich, Doctor of physical and mathematical sciences, professor, sub-department of experimental physics, Mordovia State University named after N. P. Ogarev (Saransk), gorval1934@mail.ru
Grishaev Vladimir Yakovlevich, Candidate of physico-mathematical sciences associate professor, Sub-departmend of experimental physics, Mordovia State University namend after N. P. Ogarev, grishaev53@mail.ru
Nikishin EvgenyVasilyevich, Candidate of physico-mathematical sciences associate professor, Sub-departmend of experimental physics, Mordovia State University namend after N. P. Ogarev, nikishin57@mail.ru

621.315.592

The article adduces the results of numerical studies of photoconductivity kinetics in silicon with two recombination centers. It is shown that the lifetimes of charge carriers depend on the values of their equilibrium concentrations. The lifetimes increase significantly as a result of photoexcitation removal by electron emission from donor centers. This leads to the presence of electron and hole concentrations at "fast" and "slow decline" areas on the relaxation curves.

silicon, photoconductivity kinetics, recombination centers, electron emission, lifetimes of electrons and holes.